| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-078-7029 (010787029) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Boeing Company The, Eaton Corporation, Hamilton Sundstrand Corporation, Harris Corporation, Military Specifications, Intersil Corporation, Northrop Grumman Corporation, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Thermo Electron North America Llc, Philips Semiconductors Ltd, Mmi Amd, Raytheon Company |
| Associated Parts Numbers of NSN 5962-01-078-7029 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 912351-1 | bae systems inc | microcircuit memory | 80249 | A | A | RFQ |
| 202798-006 | bae systems inc | microcircuit memory | 81413 | F | A | RFQ |
| 477-1408-002 | boeing company the | microcircuit memory | 94756 | A | A | RFQ |
| 293510 | eaton corporation | microcircuit memory | 88869 | A | H | RFQ |
| 5E8071 149A | hamilton sundstrand corporation | microcircuit memory | 73030 | A | A | RFQ |
| HMI7611 | harris corporation | microcircuit memory | 91417 | A | A | RFQ |
| MIL-M-38510/203 | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 5962-3820302BEX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510-20302BEC | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20302BEB | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 5962-3820302BEB | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| JAN-M38510/20302BEX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20302BEX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 540723 | intersil corporation | microcircuit memory | 34371 | A | A | RFQ |
| 56S821 | intersil corporation | microcircuit memory | 32293 | A | F | RFQ |
| HM7611 | intersil corporation | microcircuit memory | 34371 | A | A | RFQ |
| IM5623 | intersil corporation | microcircuit memory | 32293 | A | F | RFQ |
| HMI 7611A 2 | harris corporation | microcircuit memory | 91417 | A | A | RFQ |
| CM0115-703 | northrop grumman corporation | microcircuit memory | 22915 | A | A | RFQ |
| EL127901 | northrop grumman corporation | microcircuit memory | 22915 | A | A | RFQ |
| PC73532-1 | rockwell collins aerospace | microcircuit memory | 09344 | A | A | RFQ |
| 48-050418-02 | northrop grumman systems corporation | microcircuit memory | 15280 | A | R | RFQ |
| 113-0035-003 | thermo electron north america llc | microcircuit memory | 52787 | A | A | RFQ |
| CC5146 | philips semiconductors ltd | microcircuit memory | 18324 | A | F | RFQ |
| SM1212 | mmi amd | microcircuit memory | 50364 | A | F | RFQ |
| N82S129 | philips semiconductors ltd | microcircuit memory | 18324 | A | F | RFQ |
| 722901-50 | raytheon company | microcircuit memory | 05869 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | STATIC ELECTRICITY SENSTIVE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-078-7029, 5962010787029 | ||||
| 5962-01-314-5386 (5962013145386) | 5962-01-207-2169 (5962012072169) | 5962-01-289-4709 (5962012894709) | 5962-01-163-9035 (5962011639035) | |
| 5962-01-688-4644 (5962016884644) | 5962-01-218-6131 (5962012186131) | 5962-01-060-6300 (5962010606300) | 5962-01-070-6952 (5962010706952) | |
| 5962-01-226-2483 (5962012262483) | 5962-01-258-7470 (5962012587470) | 5962-01-314-3776 (5962013143776) | 5962-01-473-7599 (5962014737599) | |
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