| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-124-4295 (011244295) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Bae Systems Inc, Dla Land And Maritime, Genrad Ltd, Lockheed Martin Corporation, Military Specifications, Philips Semiconductors Ltd |
| Associated Parts Numbers of NSN 5962-01-124-4295 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| AM27S12DM | advanced micro devices inc | microcircuit memory | 34335 | A | A | RFQ |
| 911731-1 | bae systems inc | microcircuit memory | 80249 | A | A | RFQ |
| ROM PROM FAMILY 021 | dla land and maritime | microcircuit memory | 16236 | A | A | RFQ |
| ROM PROM HEAD 025 | dla land and maritime | microcircuit memory | 16236 | A | A | RFQ |
| 0100-1313-C | genrad ltd | microcircuit memory | 24655 | A | F | RFQ |
| 7904153-05 | lockheed martin corporation | microcircuit memory | 90536 | A | A | RFQ |
| MIL-M-38510/204 | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20401BEB | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 7904153-02 | lockheed martin corporation | microcircuit memory | 90536 | A | A | RFQ |
| M38510/20401BEA | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| 5962-3820401BEA | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| M38510/20401BEX | military specifications | microcircuit memory | 81349 | NSN | Avl | RFQ |
| N82S130N | philips semiconductors ltd | microcircuit memory | 18324 | A | F | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/204 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-124-4295, 5962011244295 | ||||
| 5962-01-314-5386 (5962013145386) | 5962-01-207-2169 (5962012072169) | 5962-01-289-4709 (5962012894709) | 5962-01-163-9035 (5962011639035) | |
| 5962-01-688-4644 (5962016884644) | 5962-01-218-6131 (5962012186131) | 5962-01-060-6300 (5962010606300) | 5962-01-070-6952 (5962010706952) | |
| 5962-01-226-2483 (5962012262483) | 5962-01-258-7470 (5962012587470) | 5962-01-314-3776 (5962013143776) | 5962-01-473-7599 (5962014737599) | |
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ESD S20.20-2014 Certification |
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