| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-214-5320 (012145320) |
| NCB Code | USA (01) |
| Manufacturer | Cypress Semiconductor Inc, Honeywell International Inc, Integrated Device Technology Inc, Lockheed Martin Corporation, Raytheon Company |
| Associated Parts Numbers of NSN 5962-01-214-5320 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| CY7C171-45DMB | cypress semiconductor inc | microcircuit memory | 65786 | A | A | RFQ |
| 71681S55C | honeywell international inc | microcircuit memory | 09128 | A | A | RFQ |
| IDT71681SA55DB | integrated device technology inc | microcircuit memory | 61772 | A | A | RFQ |
| IDT71681S-60CB | integrated device technology inc | microcircuit memory | 61772 | A | A | RFQ |
| SCD0261 | integrated device technology inc | microcircuit memory | 61772 | A | A | RFQ |
| 7917206-00 | lockheed martin corporation | microcircuit memory | 90536 | A | A | RFQ |
| 7915343-05 | lockheed martin corporation | microcircuit memory | 90536 | A | A | RFQ |
| 654908-1 | raytheon company | microcircuit memory | 82577 | F | A | RFQ |
| IDT71681SA55D | integrated device technology inc | microcircuit memory | 61772 | A | A | RFQ |
| G284856-2 | raytheon company | microcircuit memory | 49956 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.200 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.295 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.120 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CRHL | BIT QUANTITY | 16384 |
| CSWJ | WORD QUANTITY | 4096 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-214-5320, 5962012145320 | ||||
| 5962-01-314-5386 (5962013145386) | 5962-01-207-2169 (5962012072169) | 5962-01-289-4709 (5962012894709) | 5962-01-163-9035 (5962011639035) | |
| 5962-01-688-4644 (5962016884644) | 5962-01-218-6131 (5962012186131) | 5962-01-060-6300 (5962010606300) | 5962-01-070-6952 (5962010706952) | |
| 5962-01-226-2483 (5962012262483) | 5962-01-258-7470 (5962012587470) | 5962-01-314-3776 (5962013143776) | 5962-01-473-7599 (5962014737599) | |
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ESD S20.20-2014 Certification |
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