| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-375-7492 (013757492) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, General Dynamics Mission Systems, Gte Corp, Gte Government Systems Corp |
| Associated Parts Numbers of NSN 5962-01-375-7492 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 15-1326286-1 | advanced micro devices inc | microcircuit memory | 34335 | A | A | RFQ |
| 15-1326286-1 | general dynamics mission systems | microcircuit memory | 04655 | F | A | RFQ |
| 15-1326286-1 | gte corp | microcircuit memory | 0bdc6 | A | A | RFQ |
| 15-1326286-1 | gte government systems corp | microcircuit memory | 11293 | A | R | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAU | BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONHACRMPE REACT BASIC |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268 |
| MEMORY | ADAT | BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | CZZZ | MEMORY CAPACITY128K X 8 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | NHCF | NUCLEAR HARDNESS CRITICAL FEATUREHARDENED |
| MEMORY | SPCL | SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS |
| Relevant Components for NSN - 5962-01-375-7492, 5962013757492 | ||||
| 5962-01-314-5386 (5962013145386) | 5962-01-207-2169 (5962012072169) | 5962-01-289-4709 (5962012894709) | 5962-01-163-9035 (5962011639035) | |
| 5962-01-688-4644 (5962016884644) | 5962-01-218-6131 (5962012186131) | 5962-01-060-6300 (5962010606300) | 5962-01-070-6952 (5962010706952) | |
| 5962-01-226-2483 (5962012262483) | 5962-01-258-7470 (5962012587470) | 5962-01-314-3776 (5962013143776) | 5962-01-473-7599 (5962014737599) | |
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ESD S20.20-2014 Certification |
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